kw.\*:("Ion beam lithography")
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Depth control of a silicon structure fabricated by 100q keV Ar ion beam lithographyKAWASEGI, Noritaka; MORITA, Noboru; YAMADA, Shigeru et al.Applied surface science. 2007, Vol 253, Num 6, pp 3284-3291, issn 0169-4332, 8 p.Article
Wafer stage assembly for ion projection lithographyDAMM, Christoph; PESCHEL, Thomas; RISSE, Stephan et al.Microelectronic engineering. 2001, Vol 57-58, pp 181-185, issn 0167-9317Conference Paper
Focused ion beam fabrication of silicon print mastersLI, Hong-Wei; KANG, Dae-Joon; BLAMIRE, M. G et al.Nanotechnology (Bristol. Print). 2003, Vol 14, Num 2, pp 220-223, issn 0957-4484, 4 p.Conference Paper
Ion projection lithography : status of tool and mask developmentsKAESMAIER, Rainer; EHRMANN, Albrecht; LÖSCHNER, Hans et al.Microelectronic engineering. 2001, Vol 57-58, pp 145-153, issn 0167-9317Conference Paper
Helium field ion source for application in a 100 keV focused ion beam systemSAKATA, T; KUMAGAI, K; NAITOU, M et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1992, Vol 10, Num 6, pp 2842-2845, issn 1071-1023Conference Paper
Ionenprojektionsverfahren ― Lithografische Kennwerte und Anwendung = Procédé de projection d'ions. Caractéristiques lithographiques et applications = Ionic projection method ― Lithographic parameters and applicationsJÄHN, R; BERNDT, W; LISEC, M et al.Nachrichtentechnik. Elektronik. 1984, Vol 34, Num 9, pp 352-353, issn 0323-4657Article
Reference plate manufacturing process for the ion projection lithography pattern lock systemLETZKUS, F; BUTSCHKE, J; MATHUNI, J et al.Microelectronic engineering. 2001, Vol 57-58, pp 213-218, issn 0167-9317Conference Paper
Measurement of virtual crossover in liquid gallium ion sourceKOMURO, M; KANAYAMA, T; HIROSHIMA, H et al.Applied physics letters. 1983, Vol 42, Num 10, pp 908-910, issn 0003-6951Article
Ion beam lithography by using highly charged ion beam of ArIWAMITSU, Shingo; NAGAO, Mamoru; MORITA, Noboru et al.Colloids and surfaces. A, Physicochemical and engineering aspects. 2008, Vol 313-314, pp 407-410, issn 0927-7757, 4 p.Conference Paper
A reflection lithography using multicharged ionsLE ROUX, V; BORSONI, G; KORWIN-PAWLOWSKI, M. L et al.Microelectronic engineering. 2001, Vol 57-58, pp 239-245, issn 0167-9317Conference Paper
Direct writing of microtunnels using proton beam micromachiningMAROT, Laurent; MUNNIK, Frans; MIKHAILOV, Sergueï et al.Applied surface science. 2006, Vol 252, Num 20, pp 7343-7346, issn 0169-4332, 4 p.Article
Patterning nanoscale features using the 2-step NERIME nanolithography processGILMARTIN, S. F; ARSHAK, K; COLLINS, D et al.Microelectronic engineering. 2006, Vol 83, Num 4-9, pp 823-826, issn 0167-9317, 4 p.Conference Paper
Creating sub-surface channels in PMMA with ion beam lithography in only one stepGONIN, Yvan; MUNNIK, Frans; BENNINGER, Frédéric et al.Applied surface science. 2003, Vol 217, Num 1-4, pp 289-293, issn 0169-4332, 5 p.Article
ION PROJECTION MICROLITHOGRAPHYSTENGL G; KAITNA R; LOSCHNER H et al.1982; SOLID STATE TECHNOL.; ISSN 0038-111X; USA; DA. 1982; VOL. 25; NO 8; PP. 104-109; BIBL. 45 REF.Article
Resist process development for sub-100-nm ion projection lithographyHIRSCHER, S; KAESMAIER, R; DOMKE, W.-D et al.Microelectronic engineering. 2001, Vol 57-58, pp 517-524, issn 0167-9317Conference Paper
Fine pattern definition with aomic intermixing induced by focused ion beam and its application to x-ray mask fabricationKANAYAMA, T; KOMURO, M; HIROSHIMA, H et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1991, Vol 9, Num 2, pp 295-301, issn 0734-211X, 7 p., 1Article
Optimization of a chromatically limited ion microprobeSLINGERLAND, H. N.Microelectronic engineering. 1985, Vol 2, Num 4, pp 219-226, issn 0167-9317Article
Ion beam impact and penetration of polymethyl methacrylateMLADENOV, G. M; BRAUN, M; EMMOTH, B et al.Journal of applied physics. 1985, Vol 58, Num 7, pp 2534-2538, issn 0021-8979Article
Application of a focused ion beam system to micro and nanoengineeringLANGFORD, R. M; PETFORD-LONG, A. K; ROMMESWINKLE, M et al.Materials science and technology. 2002, Vol 18, Num 7, pp 743-748, issn 0267-0836Conference Paper
Masked ion beam lithography for proximity printingHAMMEL, E; LÖSCHNER, H; STENGL, G et al.Microelectronic engineering. 1996, Vol 30, Num 1-4, pp 241-244, issn 0167-9317Conference Paper
Projection ion beam lithographyLÖSCHNER, H; STENGL, G; VONACH, H et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1993, Vol 11, Num 6, pp 2409-2415, issn 1071-1023Conference Paper
Linewidth control with masked ion beam lithography using stencil masksRANDALL, J. N; BROMLEY, E. I; ECONOMOU, N. P et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1986, Vol 4, Num 1, pp 10-14, issn 0734-211XArticle
Large-field ion-optics for Projection and proximity printing and for mask-less Lithography (ML2)LOESCHNER, Hans; STENGL, Gerhard; HIRSCHER, Stefan et al.SPIE proceedings series. 2002, pp 595-606, isbn 0-8194-4434-0, 2VolConference Paper
Adjustment and mounting of stencil masks for ion projection lithographyDAMM, Christoph; GEBHARDT, Andreas; PESCHEL, Thomas et al.Microelectronic engineering. 2001, Vol 57-58, pp 187-190, issn 0167-9317Conference Paper
Pattern Specific Emulation (PSE) for ion-beam projection lithography masks using finite element analysisFISHER, A. H; ENGELSTAD, R. L; LOVELL, E. G et al.SPIE proceedings series. 1998, pp 559-567, isbn 0-8194-2776-4Conference Paper